Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Abstract
Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1−xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1−xN may open the door for extreme temperature applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 07, 2019
- Source ID
- 10.1063/1.5115013
Entities
People
- Albert G. Baca
- Alexej Pogrebnyakov
- Andrew A. Allerman
- Andrew Armstrong
- Anushka Bansal
- Bikramjit Chatterjee
- Brian M. Foley
- Brianna Klein
- Disha Talreja
- Eric Heller
- James S Lundh
- Joan Redwing
- Robert Kaplar
- Sukwon Choi
- Thomas E. Beechem
- Venkatraman Gopalan
- Yiwen Song
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- National Science Foundation
- Pennsylvania State University
- Sandia National Laboratories