High rectification sensitivity of radiofrequency signal through adiabatic stochastic resonance in nanoscale magnetic tunnel junctions
Abstract
Rectification is an important stage in electronic circuits for any wireless radio frequency power transfer application. Currently, Schottky diodes are widely used as rectifiers; however, they are inefficient at low power levels of microwatts or less (providing maximum sensitivities around 4 mV/μW). Nanoscale magnetic tunnel junctions can serve as alternative rectifiers by utilizing the so-called spin-torque diode effect, demonstrating a much higher rectification sensitivity (200 mV/μW) compared to Schottky diodes. However, for this mechanism to work, the signal frequency must match the ferromagnetic resonance frequency, which typically lies in the gigahertz range. For signals in the megahertz range or lower, Schottky diodes remain the only option for rectification. Here, we demonstrate a mechanism based on thermally activated adiabatic stochastic resonance in magnetic tunnel junctions to produce low frequency (up to tens of megahertz) signal rectification at low input power (submicrowatt), with a sensitivity of up to 35 mV/μW—higher than state-of-the-art Schottky diode rectifiers at this frequency and power range. These findings suggest magnetic tunnel junctions as potential alternatives to Schottky diodes for low frequency and low power applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 04, 2019
- Source ID
- 10.1063/1.5123466
Entities
People
- B. Ramaswamy
- Bruce E. Shapiro
- Edo Waks
- I. Weinberg
- Ilya Krivorotov
- J. A. Katine
- José M Algarín
- Y. J. Chen
Organizations
- Army Research Office
- Defense Threat Reduction Agency
- National Science Foundation
- University of Maryland