Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration

Abstract

Narrow linewidth lasers have many applications, such as higher order coherent communications, optical sensing, and metrology. While semiconductor lasers are typically unsuitable for such applications due to relatively low coherence, recent advances in heterogeneous integration of III-V with silicon have shown that this is no longer true. In this tutorial, we discuss in-depth techniques that are used to drastically reduce the linewidth of a laser. The heterogeneous silicon-III/V platform can fully utilize these techniques, and fully integrated lasers with Lorentzian linewidth on the order of 100 Hz and tuning range of 120 nm are shown.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 01, 2019
Source ID
10.1063/1.5124254

Entities

People

  • Duanni Huang
  • John E. Bowers
  • Minh Tran

Organizations

  • Defense Advanced Research Projects Agency
  • Intel Corporation
  • University of California

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics