Monolayer GaN excitonic deep ultraviolet light emitting diodes
Abstract
We report on the molecular beam epitaxy and characterization of monolayer GaN embedded in N-polar AlN nanowire structures. Deep ultraviolet emission from 4.85 to 5.25 eV is measured by varying the AlN barrier thickness. Detailed optical measurements and direct correlation with first-principles calculations based on density functional and many-body perturbation theory suggest that charge carrier recombination occurs predominantly via excitons in the extremely confined monolayer GaN/AlN heterostructures, with exciton binding energy exceeding 200 meV. We have further demonstrated deep ultraviolet light-emitting diodes (LEDs) with the incorporation of single and double monolayer GaN, which operate at 238 and 270 nm, respectively. These unique deep ultraviolet LEDs exhibit highly stable emission and a small turn-on voltage around 5 V.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 02, 2020
- Source ID
- 10.1063/1.5124828
Entities
People
- Chiyui Ahn
- David Laleyan
- Emmanouil Kioupakis
- Kai Sun
- M Kira
- Pingshan Wang
- X. Liu
- Yi Sun
- Yuanpeng Wu
- Zetian Mi
Organizations
- Army Research Office
- Michigan State University College of Engineering
- National Science Foundation
- University of Michigan