Design of AlGaN-based quantum structures for low threshold UVC lasers
Abstract
The influence of the polarization field on the emission properties of the AlGaN-based quantum structures grown on AlN substrates was investigated as a function of well width, barrier width, and barrier height. A thin AlGaN well and a thin AlN barrier design reduced the polarization field to ∼0.5 MV/cm, resulting in an ultralow laser threshold of 3 kW/cm2 in an optically pumped configuration. These experimental results were used to validate the simulation. In the next step, a structure with Al0.7Ga0.3N barriers was designed to support carrier injection with a minimal loss in optical performance. This structure showed a threshold of 7 kW/cm2 under optical pumping and an estimated threshold current of 8 kA/cm2 for the electric injection.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 09, 2019
- Source ID
- 10.1063/1.5125256
Entities
People
- Andrew Klump
- Baxter Moody
- James Tweedie
- Pramod Reddy
- Qiang Guo
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Shun Washiyama
- Yan Guan
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- North Carolina State University