Asymmetric semiconductor nanostructures for particle manipulation

Abstract

We explore how material selection affects the electromagnetic response of closely positioned asymmetric nanostructures. COMSOL Multiphysics is used to model the system, and the materials studied include gold (Au), gallium arsenide (GaAs), indium tin oxide (ITO), and aluminum zinc oxide (AZO). All materials produce average electric field magnitudes on the order of 10 MV/m. We conclude that the ITO and AZO nanostructures produce the most uniform electric field response over the entire domain of incident wavelengths and that GaAs is least thermally stable in a vacuum environment due to its low heat conductivity.

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 01, 2020
Source ID
10.1063/1.5131658

Entities

People

  • Jaykob Maser
  • Joshua L. Rovey

Organizations

  • Air Force Office of Scientific Research
  • Missouri University of Science and Technology
  • National Aeronautics and Space Administration
  • University of Illinois Urbana–Champaign

Tags

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics