Gallium nitride tunneling field-effect transistors exploiting polarization fields
Abstract
This report showcases a vertical tunnel field effect transistor (TFET) fabricated from a GaN/InGaN heterostructure and compares it to a gated vertical GaN p-n diode. By including a thin InGaN layer, the interband tunneling in the TFET is increased compared to the gated homojunction diode. This leads to an increased drain current of 57 μA/μm and a reduced subthreshold swing of 102 mV/dec, from 240 mV/dec. However, trap assisted tunneling prevents devices from realizing subthreshold slopes below the Boltzmann limit of 60 mV/dec. Nevertheless, this work shows the capability of tunnel field effect transistors to be realized in GaN by taking advantage of the spontaneous and piezoelectric polarization in the III-N material system.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 18, 2020
- Source ID
- 10.1063/1.5132329
Entities
People
- Alan Seabaugh
- Alexander Chaney
- Debdeep Jena
- Henryk Turski
- Huili Grace Xing
- Jimy Encomendero Risco
- Kazuki Nomoto
- Patrick Fay
- Sergei Rouvimov
- Tatyana Orlova
- Zongyang Hu
Organizations
- Cornell University
- Defense Advanced Research Projects Agency
- National Science Foundation
- Polish Academy of Sciences
- University of Notre Dame