Fully transparent field-effect transistor with high drain current and on-off ratio
Abstract
We report a fully transparent thin-film transistor utilizing a La-doped BaSnO3 channel layer that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5 × 108. The La-doped BaSnO3 channel is grown on a 100–150 nm thick unintentionally doped BaSnO3 buffer layer on a (001) MgO substrate by molecular-beam epitaxy. Unpatterned channel layers show mobilities of 127–184 cm2 V−1 s−1 at carrier concentrations in the low to mid 1019 cm−3 range. The BaSnO3 is patterned by reactive ion etching under conditions preserving the high mobility and conductivity. Using this patterning method, a sub-micron-scale thin film transistor exhibiting complete depletion at room temperature is achieved.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2020
- Source ID
- 10.1063/1.5133745
Entities
People
- Benjamin Grisafe
- Bo-eun Park
- Darrell G. Schlom
- Debdeep Jena
- Hanjong Paik
- Huili Grace Xing
- Jisung Park
- Kazuki Nomoto
- Kiyoung Lee
- Li-Chen Wang
- Sayeef Salahuddin
- Suman Datta
- Yongsung Kim
Organizations
- Air Force Office of Scientific Research
- Cornell University
- National Science Foundation
- Samsung Advanced Institute of Technology
- Semiconductor Research Corporation
- University of Notre Dame