Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy
Abstract
In this work, the growth of (010), (001), and 2¯01 β-Ga2O3 by plasma assisted molecular beam epitaxy was investigated. The presence of an indium flux during growth markedly expands the growth regime for β-Ga2O3 across all orientations to higher growth temperatures and growth rates. This metal oxide catalyzed growth allows for similar growth rates of around 5 nm/min across all three orientations, more than twice that of conventional (010) growth and seven times that of (001) growth without indium. Smooth surface morphologies for (010) and (001) β-Ga2O3 were demonstrated, while 2¯01 was significantly rougher. Additionally, doping with Sn was achieved across all orientations and Hall measurements demonstrated higher electron mobility (55 cm2/Vs for a carrier concentration of 3.3 × 1018 cm−3) for (001) β-Ga2O3 grown via metal oxide catalyzed epitaxy than conventional growth.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 01, 2020
- Source ID
- 10.1063/1.5135930
Entities
People
- Akhil Mauze
- Feng Wu
- James S. Speck
- Takeki Itoh
- Yuewei Zhang
Organizations
- Air Force Office of Scientific Research
- Defense Threat Reduction Agency
- Office of Naval Research
- University of California