High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Abstract
We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW (<1 μW cm−2) illumination with very low dark currents <0.1 pA at room temperature under ambient light. The high gain in large area AlGaN APDs is attributed to a high breakdown voltage at 340 V, corresponding to very high breakdown fields ∼9 MV cm−1 as a consequence of low threading and screw dislocation densities < 103 cm−2. The maximum charge collection efficiency of 30% was determined at 255 nm, corresponding to the bandgap of Al0.65Ga0.35N, with a response of 0.06 A/W. No response was detected for λ > 280 nm, establishing solar blindness of the device.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 24, 2020
- Source ID
- 10.1063/1.5138127
Entities
People
- Andrew Klump
- Baxter Moody
- Dolar Khachariya
- Erhard Kohn
- James Tweedie
- M. Hayden Breckenridge
- Pramod Reddy
- Qiang Guo
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Spyridon Pavlidis
- W. J. Mecouch
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- North Carolina State University
- Pacific Northwest National Laboratory