Determination of dielectric axes and transition moment directions in β-Ga2O3 from the polarization dependence of vibrational spectra
Abstract
β-Ga2O3 is a promising ultrawide bandgap semiconductor for high power and extreme environment applications. The dominant O—H center in Ga2O3 has been assigned to a Ga(1) vacancy–2H (VGa(1)-2H) complex. An analysis of the polarization dependence of the vibrational absorption of the VGa(1)-2D center in monoclinic β-Ga2O3 provides a unique strategy for the determination of both the orientation of the principal dielectric axes in the near infrared and the direction of the vibrational transition moment of the defect.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 04, 2020
- Source ID
- 10.1063/1.5142376
Entities
People
- Amanda Portoff
- Andrew Venzie
- Michael Stavola
- Stephen Pearton
- W. Beall Fowler
Organizations
- Defense Threat Reduction Agency
- Division of Materials Research
- Lehigh University
- University of Florida