Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices
Abstract
The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge2Sb2Te5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 350 °C, with a minimal impact on thermal conductivity.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 30, 2020
- Source ID
- 10.1063/1.5142552
Entities
People
- Andrew Sarangan
- Christopher Perez
- E. M. Smith
- Gary A. Sevison
- Heungdong Kwon
- Imad Agha
- Joshua A. Burrow
- Joshua R Hendrickson
- Kenneth E. Goodson
- Mehdi Asheghi
- Pengfei Guo
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- National Science Foundation
- Stanford University
- University of Dayton