Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
Abstract
Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. High-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 04, 2020
- Source ID
- 10.1063/1.5144079
Entities
People
- Christian Morath
- Elizabeth H. Steenbergen
- Ganesh Balakrishnan
- Gilberto A. Umana-Membreno
- Jin K. Kim
- Julie V. Logan
- Lilian K. Casias
- Lorenzo Faraone
- Preston T. Webster
- Sanjay Krishna
Organizations
- Air Force Research Laboratory
- Army Research Office
- Australian Research Council
- Massachusetts Institute of Technology
- Ohio State University
- Sandia National Laboratories
- University of New Mexico