Shallow Si donor in ion-implanted homoepitaxial AlN
Abstract
We demonstrate Si as a shallow donor in aluminum nitride (AlN) with an ionization energy of ∼70 meV. The shallow state was achieved by ion implantation of Si into homoepitaxial AlN and a low thermal budget damage recovery and activation process. These results demonstrate that the DX formation may be a kinetically limited process, though being a non-equilibrium process, preventing the Si donor from relaxing to the deep donor state. The room temperature conductivity was measured to be ∼0.05 Ω−1 cm−1, which is one order of magnitude higher than what has been reported for the epitaxially doped or implanted AlN.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 27, 2020
- Source ID
- 10.1063/1.5144080
Entities
People
- Andrew Klump
- Biplab Sarkar
- James Tweedie
- M. Hayden Breckenridge
- Pramod Reddy
- Qiang Guo
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Yan Guan
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- North Carolina State University