Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates
Abstract
The compliant behavior of high fill-factor 10 × 10 μm2 square patterned 60–140 nm thick GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible underlayer. High resolution x-ray diffraction measurements showed a larger a-lattice constant of InGaN layers deposited on these patterned GaN-on-porous GaN pseudo-substrates in comparison to those deposited on co-loaded planar GaN-on-sapphire templates. Additionally, InGaN based light emitting diode (LED) structures deposited on these GaN pseudo-substrates exhibited room temperature electroluminescence at 547 nm compared to 506 nm for the LED structures grown on co-loaded planar GaN on sapphire templates, corresponding to a redshift of around 40 nm. The longer emission wavelength was associated with the higher indium incorporation into the InGaN quantum wells deposited on the compliant GaN pseudo-substrates, owing to a reduced lattice mismatch between the quantum well and the n-InGaN base layers grown on the compliant pseudo-substrates, due to the composition pulling effect.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 16, 2020
- Source ID
- 10.1063/5.0001480
Entities
People
- Chirag Gupta
- Matthew S. Wong
- S. Keller
- Shubhra S Pasayat
- Shuji Nakamura
- Steven P. DenBaars
- Umesh Mishra
- Yifan Wang
Organizations
- Office of Naval Research
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
- University of California