The effect of external electric fields on silicon with superconducting gallium nano-precipitates
Abstract
Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements and by the advantages of integrating these elements in a silicon material platform, we investigate the properties of the superconductivity of silicon ion implanted with gallium. Here, we measure 40 different samples and explore both a variety of preparation methods (yielding both superconducting and non-superconducting samples) and the reproducibility of one of the preparation methods yielding superconducting samples. While we find agreement with the existing literature that superconducting effects are visible in this system, we also find that this superconductivity is not influenced by voltages applied to a top gate. The superconductivity in this material system is not gateable for applied electric fields as large as 8 MV/cm. We also present results of scanning transmission electron microscopy imaging of some of the same samples for which we report electronic characterization. In agreement with the existing literature, we find that the presence of Ga precipitates is essential for the presence of a superconducting transition in these samples. However, we also find evidence for large inhomogeneities in this system, which we discuss in connection with the lack of gateability we report here.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2020
- Source ID
- 10.1063/5.0002460
Entities
People
- Brandur Thorgrimsson
- E. R. MacQuarrie
- M. A. Eriksson
- Susan Coppersmith
- Thomas McJunkin
Organizations
- Army Research Office
- National Science Foundation
- Office of Naval Research Global
- University of New South Wales
- University of Wisconsin–Madison