Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74
Abstract
Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al2O3 on (InxGa1 − x)2O3 (where x = 0.25–0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from −0.38 eV for (In0.25Ga0.75)2O3 to −1.28 eV for (In0.74Ga0.26)2O3 and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In0.74Ga0.26)2O3 sample.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 09, 2020
- Source ID
- 10.1063/5.0002875
Entities
People
- Chaker Fares
- David J Smith
- Fan Ren
- Holger von Wenckstern
- Marius Grundmann
- Marko J. Tadjer
- Martha R. Mccartney
- Max Kneiß
- Minghan Xian
- Stephen Pearton
Organizations
- Arizona State University
- Defense Threat Reduction Agency
- Division of Materials Research
- European Social Fund Plus
- Leipzig University
- Office of Naval Research
- United States Naval Research Laboratory
- University of Florida