Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices
Abstract
Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In0.09Ga0.91N/Al0.19Ga0.81N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition energies are consistently lower than the calculation based on structural parameters extracted from x-ray diffraction measurements. This indicates the presence of indium composition fluctuations in InGaN and hence local bandgap reduction that produces charge localization centers. The spectral width of the low-temperature PL of our m-plane InGaN/AlGaN superlattices is narrower than previously reported for m-plane InGaN/GaN quantum wells grown by MOCVD. The PL integrated intensity drops rapidly, though, as the temperature is increased to 300 K, indicating strong non-radiative recombination at room temperature. Time-resolved PL at low temperatures was performed to characterize the relaxation time scales in an undoped and a doped superlattice.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 08, 2020
- Source ID
- 10.1063/5.0003740
Entities
People
- Alexander Senichev
- Brandon Dzuba
- Brenden A Magill
- Carlos D. Garcia
- Giti Khodaparast
- Michael J Manfra
- Oana Malis
- Rosa E. Diaz
- Steven A McGill
- Trang Nguyen
- Yang Cao
Organizations
- Air Force Office of Scientific Research
- Birck Nanotechnology Center, Purdue University
- Division of Electrical, Communications & Cyber Systems
- National High Magnetic Field Laboratory
- National Science Foundation Directorate for Mathematical & Physical Sciences
- Purdue University
- Virginia Tech