ScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices
Abstract
This paper reports on a platform for monolithic integration of piezoelectric and piezoresistive devices on a single chip using the ScAlN/3C-SiC/Si heterostructure. Surface acoustic wave devices with an electromechanical coupling of 3.2% and an out-of-band rejection as high as 18 dB are demonstrated using the excellent piezoelectric properties of ScAlN and low acoustic loss of 3C-SiC. Additionally, a large piezoresistive effect in the low-doped n-type 3C-SiC(100) thin film has been observed, which exceeds the previously reported values in any SiC thin films. The growth of the n-type 3C-SiC thin film was performed using the low pressure chemical vapor deposition technique at 1250 °C and the standard micro-electro-mechanical systems process is used for the fabrication of 3C-SiC piezoresistors. The piezoresistive effect was measured using the bending beam method in different crystallographic orientations. The maximum gauge factor is –47 for the longitudinal [100] orientation. Using the longitudinal and transverse gauge factors for different crystallographic orientations, the fundamental piezoresistive coefficients of the low-doped n-type 3C-SiC thin film are measured to be π11=(−14.5±1.3)×10−11 Pa−1, π12=(5.5±0.5)×10−11 Pa−1, and π44=(−1.7±0.7)×10−11 Pa−1.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 30, 2020
- Source ID
- 10.1063/5.0004943
Entities
People
- Afzaal Qamar
- Hoang-Phuong Phan
- Mina Rais-zadeh
- Nam-Trung Nguyen
- Toan Dinh
Organizations
- Army Research Office
- Australian Research Council
- California Institute of Technology
- Defense Advanced Research Projects Agency
- Griffith University
- National Aeronautics and Space Administration
- University of Michigan