Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
Abstract
Identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C, 860 °C, and 900 °C via plasma-assisted molecular beam epitaxy. Each sample displayed negative differential resistance (NDR) at room temperature. The figures-of-merit quantified were peak-to-valley current ratio (PVCR), yield of the device with room-temperature NDR, and peak current density (Jp). The figures-of-merit demonstrate an inverse relationship between PVCR/yield and Jp over this growth temperature series. X-ray diffraction and transmission electron microscopy were used to determine the growth rates, and layer thicknesses were used to explain the varying figures-of-merit. Due to the high yield of devices grown at 760 °C and 810 °C, the PVCR, peak voltage (Vp), and Jp were plotted vs device area, which demonstrated high uniformity and application tunability. Peak current densities of up to 1.01 MA/cm2 were observed for the sample grown at 900 °C.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2020
- Source ID
- 10.1063/5.0005062
Entities
People
- Brian P. Downey
- David F. Storm
- David J Smith
- David J. Meyer
- Elliott R. Brown
- Evan M. Cornuelle
- James G. Champlain
- Laura B Ruppalt
- Martha R. Mccartney
- Paul R. Berger
- Prudhvi Peri
- Tyler A Growden
- Vikrant J Gokhale
- Weidong Zhang
Organizations
- Arizona State University
- National Science Foundation
- Office of Naval Research
- Ohio State University
- United States Naval Research Laboratory
- Wright State University