Large-area microwire MoSi single-photon detectors at 1550 nm wavelength
Abstract
We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 μm and active areas up to 400 × 400 μm2. Despite hairpin turns and a large number of squares (up to 104) in the device, the dark count rate was measured to be ∼103 cps at 99% of the switching current. This value is about two orders of magnitude lower than the results reported recently for short MoSi devices with shunt resistors. We also found that 5 nm thick MoSi detectors with the same geometry were insensitive to single near-infrared photons, which may be associated with different levels of suppression of the superconducting order parameter. However, our results obtained on 3 nm thick MoSi devices are in good agreement with predictions in the frame of a kinetic-equation approach.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 15, 2020
- Source ID
- 10.1063/5.0005439
Entities
People
- A. Dane
- Anu Agarwal
- Ilya Charaev
- Karl K Berggren
- Marco Colangelo
- Yukimi Morimoto
Organizations
- Massachusetts Institute of Technology
- United States Army