Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer
Abstract
We demonstrate the epitaxial growth of (111)-oriented Sr1 − xCaxTiO3 (SCTO) thin films on (0002) GaN using a thin (100) TiO2 buffer layer by RF-plasma-assisted oxide molecular beam epitaxy. We explore the growth window of SCTO for both x = 0 (i.e., SrTiO3) and x = 0.24 with various TiO2 buffer layer thicknesses and find that a substrate temperature of 650 °C and TiO2 thickness of 1 nm produce the highest quality films, as determined by reflection high energy electron diffraction, x-ray diffraction, and atomic force microscopy. SCTO films deposited without a buffer layer are polycrystalline, confirming the necessity of the TiO2 buffer layer to facilitate (111)-oriented epitaxial growth of SCTO on GaN. Transmission electron microscopy performed on the samples shows that the SCTO films grown with a TiO2 buffer layer are highly textured, and selected-area electron diffraction patterns indicate that some domains in the oxide exhibit cation ordering along the (111) direction. We also show that the growth mode changes from 2D to 3D as the thickness of SCTO increases past 10 nm, which leads to film relaxation and a rougher surface morphology.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 03, 2020
- Source ID
- 10.1063/5.0007144
Entities
People
- Andrew C. Lang
- Brian P. Downey
- D. S. Katzer
- David F. Storm
- David J. Meyer
- Eric N Jin
- Matt Hardy
- Neeraj Nepal
Organizations
- American Society for Engineering Education
- National Research Council
- Office of Naval Research
- United States Naval Research Laboratory