Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi
Abstract
Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 10, 2020
- Source ID
- 10.1063/5.0007275
Entities
People
- Aaron J. Muhowski
- Daniel Wasserman
- Elizabeth H. Steenbergen
- Isabella M. Obermeier
- Marko S. Milosavljevic
- Perry C. Grant
- Preston T. Webster
- Priyanka Petluru
- S. R. Johnson
Organizations
- Air Force Research Laboratory
- Arizona State University
- Los Alamos National Laboratory
- Sandia National Laboratories
- University of New Mexico
- University of Texas at Austin