Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions
Abstract
We differentiate the effect of strain induced by lattice-mismatched growth from strain induced by mechanical deformation on cubic nonradiative Auger recombination in narrow-gap GaInAsSb/GaSb quantum well (QW) heterostructures. The typical reduction in the Auger coefficient observed with lattice-mismatched growth appears to be due to the concomitant compositional change rather than the addition of strain, with implications for mid-IR semiconductor laser design. We induced a range of internal compressive strain in five samples from −0.90% to −2.07% by varying the composition during the growth and mechanically induced a similar range of internal strain in analogous quantum well membrane samples. We performed time-resolved photoluminescence and differential reflectivity measurements to extract the carrier recombination dynamics, taken at 300 K with carrier densities from 2.7×1018 cm−3 to 1.4×1019 cm−3. We observed no change with strain in the cubic Auger coefficient of samples that were strained mechanically, but we did observe a trend with strain in samples that were strained by the QW alloy composition. Measured Auger coefficients ranged from 3.0×10−29 cm6 s−1 to 3.0×10−28 cm6 s−1.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 29, 2020
- Source ID
- 10.1063/5.0007512
Entities
People
- Andrew Briggs
- Juliet T. Gopinath
- Kenneth J. Underwood
- Kevin L. Silverman
- Nicholas Sirica
- Rohit P Prasankumar
- Sae Woo Nam
- Scott Sifferman
- Seth R. Bank
- Varun B. Verma
Organizations
- Air Force Office of Scientific Research
- Center for Integrated Nanotechnologies
- Defense Advanced Research Projects Agency
- Division of Materials Research
- Los Alamos National Laboratory
- National Institute of Standards and Technology
- University of Colorado Boulder
- University of Texas at Austin