Gated Hall and field-effect transport characterization of e-mode ZnO TFTs
Abstract
Two methods of measuring the electronic transport properties of a material are transistor DC-voltage and the Hall effect. Hall mobility measurements of normally off semiconductors can be done by electrostatic doping to lower resistance in the channel. We show that by measuring both, we can compare any value (raw measured as well as calculated data) directly to any other value along an index of FET gate and drain voltage across the entire safe operating area of the device. Our gated Hall technique intrinsic calculations of Hall mobility, typically possible only for bulk or doped materials, for thin-film transistor materials stack up with thickness scaled to practical values.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 22, 2020
- Source ID
- 10.1063/5.0009676
Entities
People
- Jason Anders
- Kevin Leedy
- M. Kazimierczuk
- M. Schuette
- M. Streby
- Nathan Miller
- T. Cooper
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- KBR, Inc.
- Wright State University