Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors
Abstract
Au-hyperdoped Si absorbs near-infrared (NIR) light and recent efforts have successfully produced Si-based NIR photodetectors based on this property but with low detection efficiencies. Here, we investigate the differences between the optical and photocurrent properties of Au-hyperdoped Si. Although defects introduced during fabrication of these materials may not exhibit significant optical absorption, we show that they can produce a measurable photocurrent under NIR illumination. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials is yet to be achieved and we discuss these opportunities in light of our results. This work thus represents a step forward in demonstrating the viability of using impurity-hyperdoped Si materials for NIR photodetection.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2020
- Source ID
- 10.1063/5.0010083
Entities
People
- Brett C Johnson
- C. T.-k. Lew
- J. S. Williams
- Jeffrey M. Warrender
- P. K. Chow
- Shao Qi Lim
Organizations
- Australian National University
- Australian Research Council
- United States Army
- University of Melbourne