Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation
Abstract
In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices. At 77 K, the photodetectors exhibit a peak responsivity of 0.68 A/W at 3.35 μm, corresponding to a quantum efficiency of 23.5% under Vb = −80 mV, without anti-reflection coating; these photodetectors have a 100% cutoff wavelength of 4.28 μm. With an R0 × A value of 1.53 × 104 Ω cm2 and a dark current density of 1.23 × 10−6 A/cm2 under an applied bias of −80 mV at 77 K, the photodetectors exhibit a specific detectivity of 9.12 × 1011 cm·Hz1/2/W.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2020
- Source ID
- 10.1063/5.0010273
Entities
People
- Arash Dehzangi
- Donghai Wu
- Jiakai Li
- Manijeh Razeghi
- Ryan Mcclintock
Organizations
- Northwestern University