Strain-driven quantum dot self-assembly by molecular beam epitaxy
Abstract
Research into self-assembled semiconductor quantum dots (QDs) has helped advance numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By carefully controlling molecular beam epitaxy (MBE) growth parameters, we can readily tune QD light absorption and emission properties to access a broad portion of the electromagnetic spectrum. Although this field is now sufficiently mature that QDs are found in consumer electronics, research efforts continue to expand into new areas. By manipulating MBE growth conditions and exploring new combinations of materials, substrate orientations, and the sign of strain, a wealth of opportunities exist for synthesizing novel QD nanostructures with hitherto unavailable properties. As such, QDs are uniquely well positioned to make critical contributions to the development of future quantum technologies. In this tutorial, we summarize the history of self-assembled QDs, outline some examples of quantum optics applications based on QDs, discuss the science that explains the spontaneous formation of QDs, and provide recipes for successful QD growth by MBE for some of the most commonly used semiconductor materials systems. We hope that compiling this information in one place will be useful both for those new to QD self-assembly and for experienced researchers, ideally supporting the community’s efforts to continue pushing the boundaries of knowledge in this important field.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 16, 2020
- Source ID
- 10.1063/5.0012066
Entities
People
- Kathryn E. Sautter
- Kevin D. Vallejo
- Paul J. Simmonds
Organizations
- Air Force Office of Scientific Research
- Boise State University
- National Science Foundation Directorate for Mathematical & Physical Sciences