A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods
Abstract
The bulk and interfacial properties of aluminum silicon oxide (AlSiO) on N-polar GaN were investigated systematically employing capacitance–voltage (C–V) methods on metal–oxide–semiconductor capacitors using a thickness series of the AlSiO dielectric. The fixed charge density, electron slow trap density, and electron fast trap density located near the interface were extracted to be –1.5 × 1012 cm−2, 3.7 × 1011 cm−2, and 1.9 × 1011 cm−2, respectively. Using ultraviolet (UV) assisted C–V methods, an average interface state density of ∼4.4 × 1011 cm−2 eV−1 and a hole trap concentration in bulk AlSiO of ∼8.4 × 1018 cm−3 were measured. The negative fixed interface charge makes it favorable to achieve a normally off GaN transistor. The analysis presented in this paper provides a systematic and quantitative model to study the properties of oxide dielectrics on wide bandgap (WBG) semiconductors, which can promote the development of metal–oxide–semiconductor-based WBG semiconductor devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 19, 2020
- Source ID
- 10.1063/5.0012289
Entities
People
- Islam Sayed
- Jana Georgieva
- S. Keller
- Silvia H Chan
- Umesh Mishra
- Wenjian Liu
Organizations
- Office of Naval Research
- University of California
- University of California, Santa Barbara