Facile and quantitative estimation of strain in nanobubbles with arbitrary symmetry in 2D semiconductors verified using hyperspectral nano-optical imaging

Abstract

When layers of van der Waals materials are deposited via exfoliation or viscoelastic stamping, nanobubbles are sometimes created from aggregated trapped fluids. Though they can be considered a nuisance, nanobubbles have attracted scientific interest in their own right owing to their ability to generate large in-plane strain gradients that lead to rich optoelectronic phenomena, especially in the semiconducting transition metal dichalcogenides. Determination of the strain within the nanobubbles, which is crucial to understanding these effects, can be approximated using elasticity theory. However, the Föppl–von Kármán equations that describe strain in a distorted thin plate are highly nonlinear and often necessitate assuming circular symmetry to achieve an analytical solution. Here, we present an easily implemented numerical method to solve for strain tensors of nanobubbles with arbitrary symmetry in 2D crystals. The method only requires topographic information from atomic force microscopy and the Poisson ratio of the 2D material. We verify that this method reproduces the strain for circularly symmetric nanobubbles that have known analytical solutions. Finally, we use the method to reproduce the Grüneisen parameter of the E′ mode for 1L-WS2 nanobubbles on template-stripped Au by comparing the derived strain with measured Raman shifts from tip-enhanced Raman spectroscopy, demonstrating the utility of our method for estimating localized strain in 2D crystals.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 08, 2020
Source ID
10.1063/5.0012817

Entities

People

  • Andrey Krayev
  • Deep Jariwala
  • Jeffrey W Kysar
  • Nicholas J Borys
  • Peter James Schuck
  • Ravindra Saxena
  • Thomas P Darlington
  • Vishal Venkatesh

Organizations

  • Columbia University
  • Montana State University
  • National Science Foundation Directorate for Engineering
  • National Science Foundation Directorate for Mathematical & Physical Sciences
  • United States Army
  • United States Department of Energy
  • University of Pennsylvania

Tags

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Materials Science.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene