Impact of electron injection on carrier transport and recombination in unintentionally doped GaN
Abstract
The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 24, 2020
- Source ID
- 10.1063/5.0017742
Entities
People
- A. Ruzin
- Fan Ren
- Igor Lubomirsky
- Leonid Chernyak
- Minghan Xian
- Sergey Khodorov
- Stephen Pearton
- Sushrut Modak
- Z. Dashevsky
Organizations
- Ben-Gurion University of the Negev
- Defense Threat Reduction Agency
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- NATO
- Tel Aviv University
- University of Central Florida
- University of Florida
- Weizmann Institute of Science