Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Abstract
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III–V semiconductor/Al structures are grown by molecular beam epitaxy on III–V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III–V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction. Applications of these structures to the field of quantum information processing are discussed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 15, 2020
- Source ID
- 10.1063/5.0023743
Entities
People
- Anthony McFadden
- Aranya Goswami
- C R H McRae
- Chris J. Palmstrøm
- David P. Pappas
- Michael Seas
- Ruichen Zhao
Organizations
- Army Research Office
- National Institute of Standards and Technology
- University of Colorado