Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
Abstract
Valence and conduction band offsets of atomic layer deposition (ALD) Al2O3 deposited on bulk AlN crystals were determined using x-ray photoelectron spectroscopy to be ΔEV = 0.75 eV and ΔEC = −1.45 eV, with a measured energy gap of the Al2O3 film of 6.9 eV. In addition, crystalline AlN deposited by atomic layer epitaxy on sapphire was evaluated, resulting in a valence band offset of ΔEV = −0.75 eV and a conduction band offset of ΔEC = 3.25 eV due to the wider bandgap of the crystalline Al2O3 substrate compared to amorphous ALD Al2O3. Both heterojunctions exhibited type-II behavior and similar valence band offsets.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 02, 2020
- Source ID
- 10.1063/5.0025835
Entities
People
- Boris N Feigelson
- Chaker Fares
- Charles R. Eddy
- Fan Ren
- J. Woodward
- Marko J. Tadjer
- Michael A. Mastro
- Stephen Pearton
Organizations
- American Society for Engineering Education
- Defense Threat Reduction Agency
- United States Naval Research Laboratory
- University of Florida