Nanoscale control of LaAlO3/SrTiO3 metal–insulator transition using ultra-low-voltage electron-beam lithography
Abstract
We describe a method to control the insulator–metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (∼10 nm) at write speeds (10 mm/s) that are up to 10 000× faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 21, 2020
- Source ID
- 10.1063/5.0027480
Entities
People
- Chang-Beom Eom
- Dengyu Yang
- Jeremy Levy
- Jun Chen
- Jung-Woo Lee
- Kitae Eom
- Muqing Yu
- Patrick Irvin
- Qing Guo
- Shan Hao
- Yang Hu
Organizations
- Office of Basic Energy Sciences
- Office of Naval Research
- Pittsburgh Quantum Institute
- University of Pittsburgh
- University of Wisconsin–Madison