Epitaxial growth of β -Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy
Abstract
Epitaxial growth of β-Ga2O3 films on (110) substrates has been performed via plasma-assisted molecular beam epitaxy (PAMBE). The atomic force microscopy scan shows a very low root mean square roughness of 0.08 nm for the surface of the as-received (110) substrates. High-resolution x-ray diffraction measurements reveal a 2.5 nm/min growth rate of β-Ga2O3 films on (110) substrates for conventional PAMBE growth conditions (∼700 °C), which is comparable to that on (010) substrates. The surface morphology of β-Ga2O3 epitaxial films is smooth and has a similar dependence on Ga flux to (010) growth. However, the (110) plane does not have a tendency to show a well-defined step–terrace structure in spite of the appearance of (110) facets in the growth of (010) β-Ga2O3. Indium catalyzed growth was also demonstrated to improve the growth rate up to 4.5 nm/min and increase the maximum growth temperature up to 900 °C of (110) β-Ga2O3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 12, 2020
- Source ID
- 10.1063/5.0027884
Entities
People
- Akhil Mauze
- James S. Speck
- Takeki Itoh
- Yuewei Zhang
Organizations
- Air Force Office of Scientific Research
- Defense Threat Reduction Agency
- Office of Naval Research
- University of California