Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
Abstract
Epitaxially grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring lumped element superconducting microwave resonators at millikelvin temperatures and down to single-photon powers. The power-independent loss of the device is (4.8±0.1)×10−5, and the resonator-induced intrinsic TLS loss is (6.4±0.2)×10−5. Dielectric loss extraction is used to determine a lower bound of the intrinsic TLS loss of the trilayer of 7.2×10−5. The unusually high power-independent loss is attributed to GaAs’s intrinsic piezoelectricity.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 12, 2021
- Source ID
- 10.1063/5.0029855
Entities
People
- Anthony McFadden
- C R H McRae
- Chris J. Palmstrøm
- D. P. Pappas
- H Wang
- J. L. Long
- Mustafa Bal
- Ruichen Zhao
- Sehyun Park
- Tianchi Zhao
Organizations
- Army Research Office
- National Institute of Standards and Technology
- National Science Foundation
- University of Colorado