Impurity band conduction in Si-doped β -Ga2O3 films
Abstract
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (–90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T < 150 K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of ∼33.7 and ∼45.6 meV. The former is consistent with the donor energy of Si in β-Ga2O3, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in β-Ga2O3 using high-field magnetotransport measurements.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 15, 2021
- Source ID
- 10.1063/5.0031481
Entities
People
- Anil Kumar Rajapitamahuni
- Bharat Jalan
- Laxman Raju Thoutam
- Praneeth Ranga
- Sriram Krishnamoorthy
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- University of Minnesota
- University of Utah