GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

Abstract

Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor ν<1) and show evidence for the ν=2/3 fractional quantum Hall state. Simultaneous optical and transport measurements reveal synchronous quantum oscillations of both the PL intensity and the longitudinal resistivity in the integer quantum Hall regime. PL spectra directly reveal the dispersion of occupied Landau levels in the 2DEG and, therefore, the electron mass. These results demonstrate the utility of high (pulsed) magnetic fields for detailed measurements of quantum phenomena in high-density 2DEGs.

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 28, 2020
Source ID
10.1063/5.0033047

Entities

People

  • Brad Ramshaw
  • Debdeep Jena
  • Huili Grace Xing
  • I. Zimmermann
  • Jonathan Leo Doorn
  • Laurel E Winter
  • Menyoung Lee
  • Ross McDonald
  • Scott Crooker
  • Y. Ren
  • Yong-Jin Cho
  • Yu Hang Lai

Organizations

  • Cornell University
  • National High Magnetic Field Laboratory
  • National Science Foundation
  • Office of Naval Research Global

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots