Tailoring superconducting phases observed in hyperdoped Si:Ga for cryogenic circuit applications
Abstract
Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (Tc) and magnetic fields (Bc) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor–semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a re-entrant resistive transition below Tc for Si:Ga whose magnitude strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the re-entrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore eliminating the re-entrant transition at temperatures as low as 20 mK.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 15, 2021
- Source ID
- 10.1063/5.0039983
Entities
People
- Javad Shabani
- Joseph Yuan
- K. Sardashti
- Kim Kisslinger
- M. Hatefipour
- Thanh Nguyen
- W. Mayer
- Wendy L. Sarney
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- Brookhaven National Laboratory
- City College of New York
- Intel Corporation
- New York University
- United States Army Combat Capabilities Development Command