One-dimensional edge contact to encapsulated MoS2 with a superconductor
Abstract
Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2021
- Source ID
- 10.1063/5.0045009
Entities
People
- Akm Newaz
- Andrew Seredinski
- Ethan G. Arnault
- F. Amet
- Gleb Finkelstein
- Kenji Watanabe
- Lingfei Zhao
- Takashi Taniguchi
- Trevyn F. Q. Larson
- Viviane Z. Costa
Organizations
- Appalachian State University
- Army Research Office
- Core Research for Evolutional Science and Technology
- Duke University
- National Institute for Materials Science
- National Science Foundation
- San Francisco State University
- United States Department of Defense
- United States Department of Energy
- Wentworth Institute of Technology