Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β -Ga2O3 Schottky rectifiers
Abstract
Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77–295 K temperature range.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 17, 2021
- Source ID
- 10.1063/5.0052601
Entities
People
- A. Ruzin
- Alfons Schulte
- Fan Ren
- Igor Lubomirsky
- Leonid Chernyak
- Minghan Xian
- Sergey Kosolobov
- Stephen Pearton
- Sushrut Modak
- Vladimir P Drachev
Organizations
- Defense Threat Reduction Agency
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- NATO
- Skolkovo Institute of Science and Technology
- Tel Aviv University
- University of Central Florida
- University of Florida
- University of North Texas
- Weizmann Institute of Science