Electron-phonon scattering in β -Ga2O3 studied by ultrafast transmission spectroscopy

Abstract

Femtosecond pump-probe experiments in a transmission geometry were performed on Sn-doped n-type β-Ga2O3. With the pump and probe wavelengths below the bandgap, the differential transmission signal was determined by the free electron dynamics. Differential transmission decay times and their spectral dependence were used to evaluate electron-phonon scattering for polar optical (PO) and intervalley phonons. The obtained average electron-PO phonon scattering time is 4.5 ± 0.4 fs, while the electron scattering to and from the side valley is 80 ± 5 fs. The energy between the absolute and second lowest conduction band minima is estimated to be 2.6 ± 0.1 eV.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 14, 2021
Source ID
10.1063/5.0053845

Entities

People

  • James S. Speck
  • S. Marcinkevičius

Organizations

  • Air Force Research Laboratory
  • Royal Institute of Technology
  • Swedish Energy Agency
  • Swedish Research Council

Tags

Fields of Study

  • Materials science

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Molecular Photonics/Laser Physics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics