A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Abstract
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1−xN, x is the Al composition), β-phase gallium oxide (β-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1−xN and β-Ga2O3. This Perspective delineates the need and process for the “electro-thermal co-design” of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 25, 2021
- Source ID
- 10.1063/5.0056271
Entities
People
- Eric Heller
- Gilberto Moreno
- Marko J. Tadjer
- Samuel Graham
- Srabanti Chowdhury
- Sreekant Narumanchi
- Sukwon Choi
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Georgia Tech
- National Renewable Energy Laboratory
- National Science Foundation
- Office of Naval Research
- Pennsylvania State University
- Stanford University
- United States Department of Energy
- United States Naval Research Laboratory