Two-dimensional carrier gas at complex oxide interfaces: Control of functionality
Abstract
New functionalities and unexpected electronic structures can emerge in artificially engineered complex oxide heterointerfaces due to the coupling of multiple physical properties such as ferroelectricity, ferromagnetism, conductivity, charge transfer, etc. Here, we discuss heterointerfaces between perovskite oxides, SrTiO3, LaAlO3, and BaTiO3, as well as the rocksalt ferromagnetic semiconductor EuO. Combining theoretical analysis, experimental growth, and characterization techniques with atomic level resolution, we highlight some of these intriguing emergent interfacial phenomena. We consider several means of creating a two-dimensional carrier gas: through band offset engineering, polarization doping, and oxygen vacancy doping. In addition, we also discuss ways of manipulating these electron/hole gases and their potential applications in new electronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 13, 2021
- Source ID
- 10.1063/5.0056445
Entities
People
- Agham Posadas
- Alexander A Demkov
- Lingyuan Gao
- Wei Guo
- Wente Li
Organizations
- Iran National Science Foundation
- University of Texas at Austin