Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films
Abstract
This manuscript reports the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 09, 2021
- Source ID
- 10.1063/5.0057869
Entities
People
- Fan He
- John Hayden
- Jon-Paul Maria
- Jung-in Yang
- Mohammad Dilwar Hossain
- Pannawit Tipsawat
- Susan Trolier-McKinstry
- Wanlin Zhu
Organizations
- Defense Advanced Research Projects Agency
- Office of Naval Research
- Pennsylvania State University