Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system
Abstract
We report an nBn photodetector based on the AlInAsSb digital alloy materials system, which has the advantage of a near-zero valence band offset. These photodetectors have achieved 28% external quantum efficiency, dark current densities of 2.6 × 10−3 A/cm2 at 300 K and 1.8 × 10−9 A/cm2 at 100 K with −0.5 V bias, and detectivity of 1.7 × 1010 Jones at room temperature under 2 μm wavelength illumination.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 19, 2021
- Source ID
- 10.1063/5.0058462
Entities
People
- Andrew H. Jones
- Dekang Chen
- J. Andrew McArthur
- Joe C. Campbell
- Renjie Wang
- Seth R. Bank
- Xingjun Xue
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- National Science Foundation
- University of Texas at Austin
- University of Virginia