Critical currents in conventional Josephson junctions with grain boundaries

Abstract

It has been hypothesized that the variation of the critical currents in Nb/Al–AlOx/Nb junctions is due to, among other effects, the presence of grain boundaries in the system. Motivated by this, we examine the effect of grain boundaries on the critical current of a Josephson junction. We assume that the hopping amplitudes are dependent on the interatomic distance and derive a physically realistic model of distance-dependent hopping amplitudes. We find that the presence of a grain boundary and associated disorder is responsible for a very large drop in the critical current relative to a clean system. We also find that when a tunnel barrier is present, grain boundaries cause substantial variations in the critical currents due to the disordered hoppings near the tunnel barrier. We discuss the applicability of these results to Josephson junctions presently intended for use in superconducting electronics applications.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 11, 2021
Source ID
10.1063/5.0060784

Entities

People

  • Andreas Kreisel
  • E. Patrick
  • Laetitia P. Bettmann
  • Mark E. Law
  • Miguel Antonio Sulangi
  • Nimesh Pokhrel
  • P. J. Hirschfeld
  • Thomas Weingartner

Organizations

  • Division of Materials Research
  • Intelligence Advanced Research Projects Activity
  • Leipzig University
  • University of Florida

Tags

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene