Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Abstract
Hydride vapor phase epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultrafast growth rates (∼500 μm/h) via uncracked hydrides are not well described by present models for the growth. Therefore, it is necessary to understand the kinetics of the growth process and its coupling with transport phenomena, so as to enable fast and uniform epitaxial growth. In this work, we derive a kinetic model using experimental data and integrate it into a computational fluid dynamics simulation of an HVPE growth reactor. We also modify an existing hydride cracking model that we validate against numerical simulations and experimental data. We show that the developed growth model and the improved cracking model are able to reproduce experimental growth measurements of GaAs in an existing HVPE system.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 15, 2021
- Source ID
- 10.1063/5.0061222
Entities
People
- Aaron J Ptak
- Hariswaran Sitaraman
- Heather Splawn
- Jacob H. Leach
- John Simon
- Kevin L. Schulte
- Kevin Udwary
- Malik Hassanaly
Organizations
- Air Force Research Laboratory
- National Renewable Energy Laboratory
- United States Department of Energy