Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1
Abstract
Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 01, 2021
- Source ID
- 10.1063/5.0062056
Entities
People
- Andrew J. Green
- Celesta S. Chang
- D. C. Look
- David A. Muller
- Hyung Min Jeon
- Jeff L. Brown
- Kelson D. Chabak
- Kevin Leedy
- Vladimir Vasilyev
- Ştefan C. Bǎdescu
Organizations
- Air Force Research Laboratory
- Cornell University
- KBR, Inc.
- Massachusetts Institute of Technology
- National Science Foundation
- Wright State University