Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
Abstract
We demonstrate that theoretical breakdown fields can be realized in practically dislocation free Al-rich AlGaN p-n junctions grown on AlN single crystal substrates. Furthermore, we also demonstrate a leakage current density in AlGaN that is independent of the device area, indicating a bulk leakage phenomenon and not surface or mesa-edge related. Accordingly, we identified the Poole–Frenkel emission from two types of point-defect traps in AlGaN as the primary source of reverse leakage before breakdown. Mg-doped AlGaN exhibited leakage currents due to a shallow trap at ∼0.16 eV in contrast with leakage currents observed in Si-doped AlGaN due to a deep trap at ∼1.8 eV.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2021
- Source ID
- 10.1063/5.0062831
Entities
People
- Dolar Khachariya
- Erhard Kohn
- Ji Hyun Kim
- M. Hayden Breckenridge
- Pegah Bagheri
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Spyridon Pavlidis
- W. J. Mecouch
- Yan Guan
- Zlatko Sitar
Organizations
- Defense Advanced Research Projects Agency
- National Aeronautics and Space Administration
- North Carolina State University